| PART |
Description |
Maker |
| AM2310N |
Low rDS(on) Provides Higher Efficiency
|
TY Semiconductor Co., Ltd
|
| IRL100HS121 |
Higher power density designs
|
Infineon Technologies A...
|
| AM1431P |
higher efficiency P-Channel MOSFET
|
TY Semiconductor Co., L...
|
| AM2306NE |
Higher Efficiency N-Channel MOSFET
|
TY Semiconductor Co., Ltd
|
| AM2305P |
Low rDS(on) provides higher efficiency
|
TY Semiconductor Co., Ltd
|
| AM2317P |
Low rDS(on) provides higher efficiency
|
TY Semiconductor Co., Ltd
|
| 2661000101 |
Higher Frequencies 250-1000 MHz
|
Fair-Rite Products Corp.
|
| AM3865L |
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
|
TY Semiconductor Co., Ltd
|
| MMBF2202PT1G |
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
|
TY Semiconductor Co., L...
|
| HE83R123 |
oscillator clocks. This chip is suitable for the applications that require higher performance
|
King Billion Electronics Co., Ltd.
|
| HMMC-1015 |
HMMC-1015 · DC-50 GHz Variable Attenuator (Higher P-1dB)
|
Agilent (Hewlett-Packard)
|
